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UG30APT thru UG30DPT
Vishay General Semiconductor
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Document Number: 88762
Revision: 05-Jun-08
2
Note:
(1) Thermal resistance from junction to case per diode mounted on heatsink
RATINGS AND CHARACTERISTICS CURVES
(TA
= 25 °C unless otherwise noted)
Maximum reverse
recovery time
IF
= 0.5 A, I
R = 1.0 A,
Irr = 0.25 A
trr
25 ns
Maximum reverse
recovery time
IF = 15 A, VR = 30 V,
dI/dt = 50 A/μs,
IRR = 10 % IRM
TJ
= 25 °C
TJ
= 100 °C
trr
35
50
ns
Maximum recovered
stored charge
IF = 15 A, VR
= 30 V,
dI/dt = 50 A/μs,
IRR = 10 % IRM
TJ
= 25 °C
TJ
= 100 °C
Qrr
22
50
nC
Typical junction
capacitance
4.0 V, 1 MHz CJ
70 pF
ELECTRICAL CHARACTERISTICS
(T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT
THERMAL CHARACTERISTICS (TA
= 25 °C unless otherwise noted)
PARAMETER SYMBOL UG30APT UG30BPT UG30CPT UG30DPT UNIT
Typical thermal resistance per diode (1)
R
θJC
2.0 °C/W
ORDERING INFORMATION
(Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-247AD UG30DPT-E3/45 6.15 30 30/tube Tube
Figure 1. Maximum Forward Current Derating Curve
0
25
50
75
100
125
150
175
0
6
12
18
24
30
36
A
v
erage For
w
ard Rectified C
u
rrent (A)
Case Temperature (°C)
Resistive or Inductive Load
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
Per Diode
1
10
100
10
100
1000
Number of Cycles at 60 Hz
Peak For
w
ard S
u
rge C
u
rrent (A)
TC
= 120 °C
8.3 ms Single Half Sine-Wave
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